Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage
Supply of 24 V (DC).
Extremely low noise
Silicon nitride passivation
TiPtAu metallized crystals ensure optimal reliability
Reverse amplifier in two-way CATV systems in the 5 MHz to 200 MHz frequency range
Short-form specification -The data in a short-form specification is Extracted from a full data sheet with the same type number and title. For Detailed information see the relevant data sheet or data handbook.
Limiting values definition -Limiting values given are in accordance with The Absolute Maximum Rating System (IEC 60134). Stress above one or More of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any Other conditions above those given in the Characteristics sections of the Specification is not implied. Exposure to limiting values for extended periods May affect device reliability.
Application information -Applications that are described herein for any Of these products are for illustrative purposes only. Philips Semiconductors Make no representation or warranty that such applications will be suitable for The specified use without further testing or modification.
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QUICK REFERENCE DATA
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain f = 10 MHz 23.5 - 24.5 dB
Itot total current consumption (DC)  - 215 230 mA
 The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V
|P arameter Conditions |
|T y p |
|G p |
|p o w er gain f = 10 MHz |
|P arameter |
|V i |
|RF input v oltage |
|T stg |
|sto r age tempe r ature |
|- 40 |
|° C |
|T mb |
|mounting base tempe r ature |
|- 20 |
|° C |