Hybrid Module (BGY888) 860M 34dB

• Manufacturing Technology: Discrete Device
• Material: Element Semiconductor
• Type: Intrinsic Semiconductor
• Package: DIP(Dual In-line Package)
• Application: Television
• Batch Number: 2010+
• Model NO.: BGY888
• Weight: 3.5kgs/Carton
• Transport Package: 25PCS/Box, 8boxes/Carton
• Origin: China
• HS Code: 85246000
• Production Capacity: 10000/per month

Product Description

FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure
Optimal reliability.

DESCRIPTION
Hybrid amplifier module for CATV
Systems operating over a frequency
Range of 40 to 550 MHz at a voltage
Supply of +24 V (DC) and intended for
Use as a line-extender.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; Supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
Use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gp power gain f = 50 MHz 33.5 - 35.5 dB
F = 550 MHz 35 - 37 dB
Itot total current consumption (DC) VB = +24 V - 320 340 mA
 

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
Gp	power gain	f = 50 MHz	33.5	--	35.5	dB
		f = 550 MHz	35	--	37	dB
Itot	Total current consumption (DC)	VB = +24 V	-	320	340	mA

 

SYMBOL	PARAMETER	MIN.	MAX	UNIT
Vi	RF input voltage	-	55	dBmV
Tstg	storage temperature	− 40	+100	° C
Tmb	mounting base operating temperature	− 20	+100	° C

 

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
Gp	power gain	f = 50 MHz	33.5	--	35.5	dB
		f = 550 MHz	35	--	37	dB
SL	slope cable equivalent	f = 40 to 550 MHz	0	--	2.5	dB
Fl	flatness of frequency response	f = 40 to 550 MHz	--	--	± 0.4	dB
S11	input return losses	f = 40 to 80 MHz	20	--	--	dB
		f = 80 to 160 MHz	19	--	--	dB
		f = 160 to 550 MHz	18	--	--	dB
S22	output return losses	f = 40 to 80 MHz	20	--	--	dB
		f = 80 to 160 MHz	19	--	--	dB
		f = 160 to 550 MHz	18	--	--	dB
CTB	composite triple beat	77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz	--	--	-57	dB
Xmod	cross modulation	77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz	--	--	-59	dB
CSO	composite second order distortion	77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz	--	--	-57	dB
d2	second order distortion	note 1	--	--	-68	dB
Vo	output voltage	dim = − 60 dB; note 2	61	--	--	dBmV
F	noise  figure	f = 550 MHz	--	--	6.5	dB
Itot	total current consumption	DC value; VB = +24 V; note 3	--	320	340	mA