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Grandway Electronics Limited

Discrete Semiconductors, CATV Amplifier Module, Module manufacturer / supplier in China, offering CATV Amplifier Module (BGY835C), 1550nm Optical Amplifier (EDFA) (GW-EA5000), CATV 1310nm Optical Transmitter (GW-OT3001) and so on.

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Supplier Homepage Product Hybrid module CATV Amplifier Module (BGY835C)

CATV Amplifier Module (BGY835C)

FOB Price: Get Latest Price
Min. Order: 1 Carton
Production Capacity: 10000Pcs
Transport Package: 25Pcs/Box, 5Boxes/Carton

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Basic Info
  • Model NO.: BGY835C
  • HS Code: 85176229
  • Origin: China
Product Description
Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V Direct Current (DC) in a SOT115J package. The module consists of two cascaded stages both in Cascode configuration.

Features
Excellent linearity
Extremely low noise
High gain
Excellent return loss properties

Applications
Single module line extender in CATV systems operating in the 40 MHz to 860 MHz Frequency range.

Definitions
Draft -The document is a draft version only. The content is still under Internal review and subject to formal approval, which may result in Modifications or additions. NXP Semiconductors does not give any Representations or warranties as to the accuracy or completeness of Information included herein and shall have no liability for the consequences of
Use of such information.

Short data sheet -A short data sheet is an extract from a full data sheet With the same product type number(s) and title. A short data sheet is intended For quick reference only and should not be relied upon to contain detailed and Full information. For detailed and full information see the relevant full data Sheet, which is available on request via the local NXP Semiconductors sales Office. In case of any inconsistency or conflict with the short data sheet, the Full data sheet shall prevail.

Disclaimers
General -Information in this document is believed to be accurate and Reliable. However, NXP Semiconductors does not give any representations or Warranties, expressed or implied, as to the accuracy or completeness of such Information and shall have no liability for the consequences of use of such Information.

Right to make changes -NXP Semiconductors reserves the right to make Changes to information published in this document, including without Limitation specifications and product descriptions, at any time and without Notice. This document supersedes and replaces all information supplied prior To the publication hereof.

Suitability for use -NXP Semiconductors products are not designed, Authorized or warranted to be suitable for use in medical, military, aircraft, Space or life support equipment, nor in applications where failure or Malfunction of an NXP Semiconductors product can reasonably be expected To result in personal injury, death or severe property or environmental Damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and Therefore such inclusion and/or use is at the customer's own risk.

Applications -Applications that are described herein for any of these Products are for illustrative purposes only. NXP Semiconductors makes no Representation or warranty that such applications will be suitable for the Specified use without further testing or modification.

Limiting values -Stress above one or more limiting values (as defined in The Absolute Maximum Ratings System of IEC 60134) may cause permanent Damage to the device. Limiting values are stress ratings only and operation of The device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting Values for extended periods may affect device reliability.

Terms and conditions of sale -NXP Semiconductors products are sold Subject to the general terms and conditions of commercial sale, as published, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
Symbol
 
P arameter
 
Conditions
 
G p
 
p o w er gain
 
f = 50 MHz
 

 

 
f = 860 MHz
 
I tot
 
total current
 

 









Min
 
T y p
 
Max
 
Unit
 
33.5
 
-
 
34.5
 
dB
 
34
 
-
 
-
 
dB
 
-
 
-
 
340
 
mA
 
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